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 ESJA18
HIGH VOLTAGE DIODE
ESJA18 is high reliability resin molded type high voltage diode in small size package which is sealed (a multilayed mesa type silicon chip) by epoxy resin.
Lot No.
(8kV/5mA)
Outline Drawings
Cathode Mark o 2.5 o 0.5
Features
Ultra high speed switching Low VF High surge resisitivity for CRT discharge High reliability design Ultra small pakage
27 min.
6.5
27 min.
Cathode Mark
Type Mark
Applications
Rectification for CRT display monitor high voltage power supply (FBT:Flyback Transformer)
ESJA18-08
Maximum Ratings and Characteristics
Absolute Maximum Ratings
Items Repetitive Peak Reverse Voltage Average Output Current Surge Current Junction Temperature Allowable Operation Case Temperature Storage Temperature Symbols VRRM IO IFSM Tj Tc Tstg Ta=25C,Resistive Load 10mS Sine-half wave peak value
Condition
Ratings 8 5 0.5 120 100 -40 to +120
Units kV mA A C C C
Electrical Characteristics (Ta=25C Unless otherwise specified )
Items Maximum Forward Voltage Drop Maximum Reverse Current Maximum Reverse Recovery Time Junction Capacitance Symbols VF IR trr Cj Conditions IF=10mA VR=VRRM Ta=25C,IF=2mA,IR=4mA Ta=25C,VR=0V,f=1MHz Retings 28 2 0.045 2 Units V A s pF
ESJA18
Characteristics
(8kV/5mA)
28
1
24
Tj=100
o
C
0.1
IF
20
Tj=100
o
C
Tj= 25
o
C
IR [ A]
0.01
[mA] 16
12
Tj= 25
o
C
1E-3
8
0
10
20
30
40
0
2
4
6
8
10
12
VF
[V]
Forward Characteristics
V R [kV] Reverse Characteristics
1.0
o
100
Tj=25 C f=1MHz
Tj= 25 C I R =100 A N=100pcs.
o
0.8
80
Cj [pF]
0.6
N [pcs.]
60
0.4
40
0.2
20
0.0
0
50
100
150
200
0
V Bias
[V]
0
4
8
V
12
AV
[kV]
16
20
24
28
Junction Capacitance Characteristics
Avalanche Breakdown Voltage
120
Tj= 25 C N=100pcs.
o
0.01F
D.U.T
100
1kohm
80
150 kohm
100ohm
N [pcs.]
60
OSCILLO SCOPE
40
20
IF=2mA 0
1mA
0 0.00
0.02
trr ( s)
0.04
0.06
0.08
0.10
IR=4mA
Reverse Recovery Time
trr


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